SI7143DP Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
Si7143DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
1.2
V_GS = 10 V thru 5 V
50
0.9
40
T_C = 125 °C
30
20
10
0
0.0
0.030
V_GS = 4 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.6
0.3
0.0
0
3600
T_C = 25 °C
T_C = - 55 °C
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.025
0.020
V_GS = 4.5 V
3000
C_iss
2400
0.015
1800
0.010
0.005
V_GS = 10 V
0.000
0
15
30
45
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 16.1 A
8
V_DS = 8 V
6
V_DS = 15 V
4
2
V_DS = 24 V
1200
600
C_oss
Crss
0
0
6
12
18
24
30
V_DS - Drain-Source Voltage (V)
Capacitance
1.8
I_D = 16.1 A
1.5
1.2
0.9
V_GS = 10 V
V_GS = 4.5 V
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (ºC)
On-Resistance vs. Junction Temperature
Document Number: 65670
S10-0112-Rev. A, 18-Jan-10
www.vishay.com
3