SI7138DP Datasheet, PDF (4/7 Pages) Vishay Siliconix – Vishay Siliconix

Si7138DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.020
T_J = 150 °C
10
T_J = 25 °C
0.015
0.010
I_D = 19.7 A
T_J = 125 °C
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3.7
I_D = 250 µA
3.2
T_J = 25 °C
0.005
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
80
2.7
60
2.2
40
1.7
20
1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 _{Limited by RDS(on)*}
I_D(on) limited
IDM limited
100 µs
10
1 ms
10 ms
1
100 ms
0.1
T_A = 25 °C
Single Pulse
BVDSS limited
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73530
S11-0212-Rev. C, 14-Feb-11