SI7117DN-T1-GE3 Datasheet, PDF (4/13 Pages) Vishay Siliconix – P-Channel 150 V (D-S) MOSFET

Si7117DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
3.0
2.5
2.0
T_J = 150 °C
25 °C
1
1.5
1.0
T_A = 125 °C
T_A = 25 °C
0.5
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.3
I_D = 250 µA
1.0
0.7
0.4
0.1
- 0.2
0.0
0.00
2.00
4.00
6.00
8.00
10.00
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
T_A = 25 °C
20
10
- 0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
10
Limited by R_DS(on)*
1
0.1
10 µs
100 µs
1 ms
10 ms
0.01
T_A = 25 °C
Single Pulse
100 ms
1s
10 s
100 s
DC
0
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at R_DS(on) is specified
Safe Operating Area at T_A = 25 °C
1000
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Document Number: 73478
4
S11-0648-Rev. C, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000