SI7117DN-T1-GE3 Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 150 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.00
V_GS = 10 V thru 5 V
4V
2.00
4.00
6.00
8.00
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
10.00
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.00
2.0
500
Si7117DN
Vishay Siliconix
T_C = 125 °C
25 °C
- 55 °C
1.20
2.40
3.60
4.80
6.00
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.5
V_GS = 6 V
1.0
V_GS = 10 V
0.5
0.0
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 0.5 A
8
V_DS = 75 V
6
V_DS = 105 V
4
400
C_iss
300
200
100
0 ^Crss
0
C_oss
30
60
90
120
150
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.5
I_D = 0.5 V
2.0
1.5
V_GS = 10 V
1.0
2
0.5
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
0.0
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73478
www.vishay.com
S11-0648-Rev. C, 11-Apr-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000