SI7106DN Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 20-V (D-S) Fast Switching MOSFET

Si7106DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
50
I_D = 250 µA
0.2
40
0.0
30
- 0.2
20
- 0.4
- 0.6
10
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by
R_DS(on)*
10
I_D(on)
Limited
1
0.1
T_A = 25 °C
Single Pulse
0
0.01
0.1
1
10
100
600
Time (s)
Single Pulse Power, Junction-to-Ambient
I_DM Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
2
1
Duty Cycle = 0.5
0.01
BV_DSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Single Pulse
10^-3
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 65 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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4
Document Number: 73142
S-81529-Rev. E, 30-Jun-08