SI7106DN Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 20-V (D-S) Fast Switching MOSFET

Si7106DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.016
3500
0.014
0.012
C_iss
2800
0.010
0.008
0.006
0.004
0.002
0.000
0
V_GS = 2.5 V
V_GS = 4.5 V
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
2100
1400
700
C_oss
C_rss
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
5
V_DS = 10 V
4
I_D = 19.5 A
1.6
V_GS = 4.5 V
1.4
I_D = 19.5 A
3
1.2
2
1.0
1
0.8
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
60
T_J = 150 °C
10
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.024
0.020
0.016
I_D = 5 A
0.012
0.008
I_D = 19.5 A
0.004
0.000
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73142
S-81529-Rev. E, 30-Jun-08
www.vishay.com
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