SI7101DN Datasheet, PDF (4/13 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

New Product
Si7101DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.050
10
T_J = 150 °C
1
T_J = 25 °C
0.040
0.030
I_D = 15 A
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.020
0.010
T_J = 125 °C
T_J = 25 °C
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.8
100
0.6
I_D = 250 μA
80
0.4
60
0.2
I_D = 1 mA
40
0
- 0.2
20
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
I_DM Limited
10 I_D Limited
100 μs
1
Limited by R_DS(on)*
1 ms
10 ms
100 ms
0.1
1s
10 s
T_A = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS Limited
1
10
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
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Document Number: 63232
4
S13-0792-Rev. A, 15-Apr-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000