SI7101DN Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
80
V_GS = 10 V thru 5 V
64
64
V_GS = 4 V
48
48
32
32
T_C = 25 °C
Si7101DN
Vishay Siliconix
16
0
0.0
0.0200
V_GS = 3 V
V_GS = 2 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0160
16
T_C = 125 °C
T = - 55 °C
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
5000
C_iss
4000
0.0120
V_GS = 4.5 V
0.0080
0.0040
V_GS = 10 V
0.0000
0
16
32
48
64
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
V_DS = 15 V
6
V_DS = 10 V
4
V_DS = 20 V
2
3000
2000
1000
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 15 A
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
0.8
0
0
14
28
42
56
70
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63232
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www.vishay.com
S13-0792-Rev. A, 15-Apr-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000