SI6968DQ Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 2.5-V (G-S) Battery Switch

Si6968DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SourceĆDrain Diode Forward Voltage
20
10
T_J = 150_C
OnĆResistance vs. GateĆtoĆSource Voltage
0.08
0.06
0.04
T_J = 25_C
0.02
I_D = 6.5 A
1
0
0.4
0.2
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
I_D = 250 mA
–0.0
–0.2
–0.4
–0.6
–50
0
50
100
150
T_J – Temperature (_C)
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
30
25
20
15
10
5
0
0.01
0.1
1
Time (sec)
10 30
Normalized Thermal Transient Impedance, JunctionĆtoĆAmbient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^–4
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 85_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone [phone] S FaxBack [phone] S www.siliconix.com
S-56943—Rev. E, 02-Nov-98
Siliconix was formerly a division of TEMIC Semiconductors
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