SI6968DQ Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 2.5-V (G-S) Battery Switch

Si6968DQ
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
PARAMETER
SYMBOL
TEST CONDITION
STATIC
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^A
Drain-Source On-State Resistance^A
Forward Transconductance^A
Diode Forward Voltage^A
DYNAMIC^B
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 70_C
V_DS w 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 6.5 A
V_GS = 2.5 V, I_D = 5.5 A
V_DS = 10 V, I_D = 6.5 A
I_S = 1.5 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
A. Pulse test; pulse width v 300 ms, duty cycle v 2%.
B. Guaranteed by design, not subject to production testing.
V_DS = 10 V, V_GS = 10 V, I_D = 6.5 A
V_DD = 10 V, R_L = 10 W
I_D ^ 1 A, V_GEN = 4.5 V, R_G = 6 W
I_F = 1.5 A, di/dt = 100 A/ms
MIN
TYP MAX UNIT
0.6
V
"100
nA
1
mA
5
30
A
0.017 0.022
W
0.022 0.030
30
S
0.66
1.2
V
16
30
3.4
nC
4.0
20
40
48
80
90
180
ns
55
110
40
70
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone [phone] S FaxBack [phone] S www.siliconix.com
S-56943—Rev. E, 02-Nov-98
Siliconix was formerly a division of TEMIC Semiconductors
5-2