SI6946DQ Datasheet, PDF (4/4 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET

Si6946DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
20
T_J = 150_C
10
On-Resistance vs. Gate-to-Source Voltage
0.10
0.09
0.08
T_J = 25_C
0.07
0.06
I_D = 2.8 A
0.05
1
0.00 0.25 0.50 0.75 1.00 1.25 1.50
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
1.0
0.04
0
2
4
6
8
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
25
20
0.5
15
0.0
I_D = 250 µA
10
–0.5
5
–1.0
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.001
0.01
0.1
1
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 30
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 125_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70177
S-49534—Rev. E, 06-Oct-97