SI6946DQ Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET

Si6946DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 8 thru 3 V
16
16
12
12
2V
8
8
Transfer Characteristics
T_C = –55_C
125_C
25_C
4
0
0
0.20
1V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
4
0
0
1
2
3
4
V_GS – Gate-to-Source Voltage (V)
1500
Capacitance
0.15
0.10
0.05
V_GS = 2.5 V
V_GS = 4.5 V
0
0
2
4
6
8
10
I_D – Drain Current (A)
5
V_DS = 10 V
I_D = 2.8 A
4
Gate Charge
1200
900
600
300
0
0
C_rss
C_oss
C_iss
2
4
6
8
10
12
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
V_GS = 4.5 V
I_DS = 2.8 A
1.6
3
1.2
2
0.8
1
0.4
0
0
4
8
12
16
20
Q_g – Total Gate Charge (nC)
Document Number: 70177
S-49534—Rev. E, 06-Oct-97
0
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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