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SI6925ADQ_08 Datasheet, PDF (4/11 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET
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Si6925ADQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
100
0.2
80
ID = 250 µA
0.0
60
- 0.2
40
- 0.4
20
- 0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited
10 by RDS(on)*
0
10-3
10-2
10-1
1
10
Time (s)
Single Pulse Power
IDM Limited
1 ms
2
1
Duty Cycle = 0.5
1
ID(on)
Limited
10 ms
100 ms
0.1
0.01
TA = 25 °C
1s
Single Pulse
10 s
DC
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 125 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 72623
S-81056-Rev. B, 12-May-08
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