SI6925ADQ_08 Datasheet, PDF (1/11 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET

Si6925ADQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.045 at V_GS = 4.5 V
20
0.055 at V_GS = 3.0 V
0.065 at V_GS = 2.5 V
I_D (A)
3.9
3.5
3.0
FEATURES
• Halogen-free
RoHS
COMPLIANT
D₁
D₂
D₁ 1
S_{1 2}
S_{1 3}
G_{1 4}
TSSOP-8
Top View
8 D2
7 ^S2
6 ^S2
5 ^G2
Ordering Information: Si6925ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G₁
S₁
N-Channel MOSFET
G₂
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
3.9
3.3
3.1
2.6
A
Pulsed Drain Current (10 µs Pulse Width)
I_DM
30
Continuous Source Current (Diode Conduction)^a
I_S
1.0
0.72
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.13
0.80
0.72
0.51
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
186
125
65
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
Maximum
110
155
85
Unit
°C/W
Document Number: 72623
S-81056-Rev. B, 12-May-08
www.vishay.com
1