SI6475DQ Datasheet, PDF (4/4 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

Si6475DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.5
Single Pulse Power, Junction-to-Ambient
60
50
0.3
I_D = 250 mA
40
0.1
30
20
–0.1
10
–0.3
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
10^–2
10^–1
1
10
100
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
2
1
Duty Cycle = 0.5
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 95_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^–4
10^–3
10^–2
10^–1
1
10
Square Wave Pulse Duration (sec)
www.vishay.com
4
Document Number: 71294
S-01889—Rev. A, 28-Aug-00