SI6475DQ Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

New Product
P-Channel 12-V (D-S) MOSFET
Si6475DQ
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.011 @ V_GS = –4.5 V
–12
0.0135 @ V_GS = –2.5 V
0.017 @ V_GS = –1.8 V
I_D (A)
–10
–9
–8
S*
TSSOP-8
D1_D
S2
S3
Si6475DQ
G4
Top View
8D
7S
6S
5D
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–12
"8
–10
–7.8
–8
–6.2
–30
–1.5
–0.95
1.75
1.08
1.14
0.69
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71294
S-01889—Rev. A, 28-Aug-00
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
55
95
35
Maximum
70
115
45
Unit
_C/W
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