SI5944DU Datasheet, PDF (4/10 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

Si5944DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.30
0.25
I_D = 3.3 A
T_J = 150 °C
1
T_J = 25 °C
0.20
0.15
0.10
0.05
T_A = 125 °C
T_A = 25 °C
0.01
0
0.2
0.4
0.6
0.8
1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3.0
2.8
I_D = 250 µA
2.6
2.4
2.2
2.0
1.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
1
0.1
T_A = 25 °C
Single Pulse
0.01
0.00
1
3
5
7
9
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
45
40
35
30
25
20
15
10
5
0
0.001 0.01
0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
10 ms
100 ms
1s
10 s
DC
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4
0.001
0.1
1
10
100
* V_GS
V_DS - Drain-to-Source Voltage (V)
minimum V_GS at which R _DS(on) is specified
Safe Operating Area
Document Number: 73683
S-81449-Rev. B, 23-Jun-08