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| SI5935DC Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual P-Channel 1.8-V (G-S) MOSFET | |||
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Si5935DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
Single Pulse Power
0.3
40
ID = 250 mA
0.2
30
0.1
20
0.0
10
- 0.1
- 0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (_C)
0
10-4 10-3
10-2 10-1
1
Time (sec)
Safe Operating Area
100
rDS(on) Limited
IDM Limited
10
P(t) = 0.0001
10 100 600
1
0.1
0.01
0.1
ID(on)
Limited
TC = 25_C
Single Pulse
BVDSS Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
1
10
100
VDS - Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1 0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
www.vishay.com
4
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Document Number: 72220
S-31260âRev. A, 16-Jun-03
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