SI5935DC Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 1.8-V (G-S) MOSFET

New Product
Si5935DC
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.086 @ V_GS = - 4.5 V
- 20
0.121 @ V_GS = - 2.5 V
0.171 @ V_GS = - 1.8 V
1206-8 ChipFETr
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S₁
D₁
G₁
D₁
S₂
D₂
G₂
D₂
Bottom View
Ordering Information: Si5935DC-T1
I_D (A)
- 4.1
- 3.4
- 2.9
FEATURES
D TrenchFETr Power MOSFETS
D Low r_DS(on) Dual and Excellent Power
Handling In A Compact Footprint
APPLICATIONS
D Load Switch
D PA Switch
D Battery Switch
S₁
S₂
G₁
G₂
Marking Code
DF XX
Lot Traceability
and Date Code
Part # Code
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V_GS
"8
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
I_D
I_DM
I_S
P_D
T_J, T_stg
- 4.1
-3
- 2.9
- 2.2
- 15
- 1.8
- 0.9
2.1
1.1
1.1
0.6
- 55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 5 sec
50
Steady State
R_thJA
90
Steady State
R_thJF
30
60
110
_C/W
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72220
S-31260—Rev. A, 16-Jun-03
www.vishay.com
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