SI5933CDC Datasheet, PDF (4/7 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Si5933CDC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.25
0.20
10
0.15
T_J = 150 °C
T_J = 25 °C
0.10
1
0.05
I_D = - 2.5 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temp.
0.7
0.00
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
5
0.6
4
I_D = 250 µA
0.5
3
0.4
2
0.3
1
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0
0.001
0.01
0.1
1
10
100
Time (s)
Single Pulse Power
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4
Limited by R_DS(on)*
10
100 µs
1
1 ms
0.1
T_A = 25 °C
Single Pulse
BVDSS Limited
10 ms
100 ms
1 s, 10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 68822
S-81731-Rev. A, 04-Aug-08