SI5933CDC Datasheet, PDF (3/7 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

New Product
Si5933CDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
2.0
V_GS = 5 thru 2.5 V
8
V_GS = 2 V
1.5
6
1.0
4
V_GS = 1.5 V
2
V_GS = 1 V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.5
0.0
0.0
0.30
540
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.25
0.20
0.15
V_GS = - 1.8 V
V_GS = - 2.5 V
450
360
C_iss
270
0.10
V_GS = - 4.5 V
0.05
0.00
0
2
4
6
8
10
I_D - Drain Current (A)
On Resistance vs. Drain Current
5
I_D = 2.5 A
4
V_DS = 10 V
3
V_DS = 16 V
2
1
0
0
1
2
3
4
5
Q_g - Total Gate Charge (nC)
Gate Charge
180
C_oss
90
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
1.3
V_GS = - 4.5 V; I_D = - 2.5 A
1.1
0.9
V_GS = - 2.5 V; I_D = - 2.2 A
0.7
- 50 - 25 0 25 50
75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68822
S-81731-Rev. A, 04-Aug-08
www.vishay.com
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