SI5908DC_10 Datasheet, PDF (4/10 Pages) Vishay Siliconix – Dual N-Channel 20 V (D-S) MOSFET

Si5908DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.2
50
0.1
40
I_D = 250 µA
0.0
30
- 0.1
20
- 0.2
- 0.3
10
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
10^-4 10^-3
10^-2 10^-1
1
10
Time (s)
Single Pulse Power
100 600
I_DM Limited
100 μs
1
I_D(on)
Limited
0.1
T_A = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
10
1 ms
10 ms
100 ms
1s
10 s
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
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4
Document Number: 73074
S10-0548-Rev. B, 08-Mar-10