SI5908DC_10 Datasheet, PDF (3/10 Pages) Vishay Siliconix – Dual N-Channel 20 V (D-S) MOSFET

Si5908DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
800
0.08
0.06
0.04
V_GS = 1.8 V
V_GS = 2.5 V
700
600
C_iss
500
400
300
0.02
V_GS = 4.5 V
0.00
0
4
8
12
16
20
200
C_oss
100
C_rss
0
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
V_DS - Drain-to-Source Voltage (V)
Capacitance
5
V_DS = 10 V
I_D = 4.4 A
4
1.6
V_GS = 4.5 V
I_D = 4.4 A
1.4
3
1.2
2
1.0
1
0.8
0
0
1
2
3
4
5
6
Q_g - Total Gate Charge (nC)
Gate Charge
20
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
T_J = 150 °C
10
T_J = 25 °C
0.08
0.06
0.04
I_D = 2 A
I_D = 4.4 A
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73074
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
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