SI5905BDC Datasheet, PDF (4/7 Pages) Vishay Siliconix – Dual P-Channel 8-V (D-S) MOSFET

Si5905BDC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.30
I_D = 3.3 A
0.25
0.20
T_J = 150 °C
0.15
T_J = 25 °C
0.10
0.05
T_A = 125 °C
T_A = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temp
0.7
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
0.6
I_D = 250 µA
30
0.5
20
0.4
10
0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
10
*Limited
by r_DS(on)
1
0.1
0
0.0001 0.001 0.01 0.1
1
10
Time (sec)
Single Pulse Power
100 1000
1 ms
10 ms
100 ms
1s
10 s
dc
T_A = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
V_DS - Drain-to-Source Voltage (V)
*V_GS minimum V_GS at which r_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 74650
S-71343-Rev. A, 09-Jul-07