SI5905BDC Datasheet, PDF (3/7 Pages) Vishay Siliconix – Dual P-Channel 8-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
5
V_GS = 5 thru 2.5 V
8
4
2V
6
3
Si5905BDC
Vishay Siliconix
4
2
0
0.0
0.30
1.5 V
1V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.25
0.20
0.15
V_GS = 1.8 V
V_GS = 2.5 V
0.10
0.05
V_GS = 4.5 V
0.00
0
2
4
6
8
10
I_D - Drain Current (A)
On Resistance vs. Drain Current
8
I_D = 3.7 A
6
V_DS = 4 V
4
V_DS = 6.4 V
2
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 74650
S-71343-Rev. A, 09-Jul-07
2
1
0
0.0
600
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
450
C_iss
300
C_oss
150
C_rss
0
0
2
4
6
8
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 3.3 A
1.4
1.3
V_GS = 4.5 V, 2.5 V, 1.8 V
1.2
1.1
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3