SI5486DU_08 Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

Si5486DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.040
T_J = 150 °C
T_J = 25 °C
10
0.035
0.030
0.025
0.020
I_D = 7.7 A
T_A = 125 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.015
T_A = 25 °C
0.010
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.9
50
0.8
40
0.7
I_D = 250 µA
0.6
30
0.5
0.4
20
0.3
10
0.2
0.1
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
100 µs
1 ms
1
T_A = 25 °C
Single Pulse
0.1
BVDSS Limited
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73783
S-81449-Rev. B, 23-Jun-08