SI5486DU_08 Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
20
V_GS = 5 thru 2 V
32
16
Si5486DU
Vishay Siliconix
24
16
V_GS = 1.5 V
8
V_GS = 1 V
0
0.0
0.4
0.8
1.2
1.6
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.025
0.022
0.019
0.016
0.013
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
0.010
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
I_D = 9.3 A
6
V_DS = 10 V
V_DS = 16 V
4
2
12
T_C = - 55 °C
8
T_C = 125 °C
4
T_C = 25 °C
0
0.0
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3000
2500
C_iss
2000
1500
1000
500
C_oss
0 ^Crss
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5, 2.5 V, 1.8 V
I_D = 7.7 A
1.4
1.2
1.0
0.8
0
0
8
16
24
32
40
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73783
S-81449-Rev. B, 23-Jun-08
www.vishay.com
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