SI5485DU Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si5485DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
0.10
0.08
T_J = 150 °C
10
0.06
0.04
T_J = 25 °C
0.02
I_D = 5.9 A
125 °C
25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
1.3
1.2
I_D = 250 µA
1.1
1.0
0.9
0.8
0.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.001 0.01
0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
1
0.1
T_A = 25 °C
Single Pulse
BVDSS limited
1 ms
10 ms
100 ms
1s
10 s
DC
www.vishay.com
4
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73779
S-81448-Rev. C, 23-Jun-08