SI5485DU Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
10
V_GS = 5 V thru 3 V
24
8
V_GS = 2.5 V
18
6
Si5485DU
Vishay Siliconix
12
6
0
0.0
0.10
V_GS = 2 V
V_GS = 1.5 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.08
0.06
0.04
V_GS = 2.5 V
0.02
V_GS = 4.5 V
0.00
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 8.8 A
8
6
V_DS = 10 V
V_DS = 16 V
4
2
0
0.0
1800
T_C = 125 °C
T_C = 25 °C
0.5
1.0
T_C = - 55 °C
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1500
1200
C_iss
900
600
300
C_rss
C_oss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 5.9 A
1.4
V_GS = 4.5 V, 2.5 V
1.2
4
1.0
2
0.8
0
0
5
10
15
20
25
30
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73779
S-81448-Rev. C, 23-Jun-08
www.vishay.com
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