SI5479DU Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

Si5479DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.10
10
0.08
T_J = 150 °C
0.06
T_J = 25 °C
0.04
0.02
T_A = 125 °C
T_A = 25 °C
I_D = 6.9 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.9
40
0.8
I_D = 250 µA
30
0.7
0.6
20
0.5
10
0.4
0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
1
0.1
T_A = 25 °C
Single Pulse
0
0.001 0.01
0.1
1
10 100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73368
S-81448-Rev. B, 23-Jun-08