SI5475DDC Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

Si5475DDC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
I_D = 5.4 A
0.08
T_J = 150 °C
10
0.06
0.04
T_J = 125 °C
T_J = 25 °C
0.02
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temp.
0.8
0.7
0.6
I_D = 250 µA
0.5
0.4
0.3
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
10^-3
10^-2
10^-1
1
10
Time (s)
Single Pulse Power
100 600
100
Limited by R_DS(on)*
10
1 ms
1
10 ms
0.1
T_A = 25 °C
Single Pulse
BVDSS
Limited
100 ms
10 s
1s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 68750
S-82487-Rev. B, 13-Oct-08