SI5475DDC Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
V_GS = 5 thru 2 V
16
8
Si5475DDC
Vishay Siliconix
12
8
V_GS = 1.5 V
4
0
0.0
0.08
V_GS = 1 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
6
4
2
0
0.0
2500
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.06
0.04
0.02
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
5
10
15
20
I_D - Drain Current (A)
On Resistance vs. Drain Current
8
I_D = 7.5 A
6
V_DS = 6 V
4
V_DS = 9.6 V
2
0
0
8
16
24
32
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68750
S-82487-Rev. B, 13-Oct-08
2000
C_iss
1500
1000
C_oss
500
C_rss
0
0
3
6
9
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
1.4
V_GS = 4.5 V, 2.5 V, I_D = 5.4 A
1.3
1.2
1.1
V_GS = 1.8 V, I_D = 2 A
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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