SI5475DC Datasheet, PDF (4/4 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

Si5475DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.30
50
0.25
0.20
I_D = 1_m A
40
0.15
30
0.10
0.05
20
--0.00
--0.05
10
--0.10
--0.15
--50 --25
0 25 50 75 100 125 150
T_J -- Temperature (_C)
0
10^--3
Single Pulse Power
10^--2
10^--1
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^--4
Single Pulse
10^--3
10^--2
10^--1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
1.
2.
t₂
Duty Cycle, D
Per Unit Base
=
=
t₁
R_th^t_J2A
=
80_C/W
3. T_JM -- T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^--4
Single Pulse
10^--3
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4
10^--2
10^--1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71324
S-21251—Rev. B, 05-Aug-02