SI5475DC Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

P-Channel 12-V (D-S) MOSFET
Si5475DC
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.031 @ V_GS = --4.5 V
--12
0.041 @ V_GS = --2.5 V
0.054 @ V_GS = --1.8 V
1206-8 ChipFETt
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D
D
D
D
D
D
G
S
Bottom View
Ordering Information: Si5475DC-T1
I_D (A)
--7.6
--6.6
--5.8
S
Marking Code
BF XX
Lot Traceability
and Date Code
Part #
Code
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
--12
V_GS
8
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
I_D
I_DM
I_S
P_D
T_J, T_stg
--7.6
--5.5
--3.5
--3.9
20
--2.1
--1.1
2.5
1.3
1.3
0.7
--55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
40
Steady State
R_thJA
80
Steady State
R_thJF
15
50
95
_C/W
20
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-
tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-
connection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71324
S-21251—Rev. B, 05-Aug-02
www.vishay.com
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