SI5475BDC Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

Si5475BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.10
10
T_J = 150 °C
T_J = 25 °C
0.08
0.06
0.04
T_A = 25 °C
I_D = 5.6 A
T_A = 125 °C
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.0
0.9
I_D = 250 µA
0.8
0.7
0.6
0.5
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Temperature
50
40
30
20
10
0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_(DS)on*
10
1
0.1
T_A = 25 °C
Single Pulse
0
0.001 0.01
0.1
1
10 100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73381
S-83054-Rev. D, 29-Dec-08