SI5475BDC Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
V_GS = 5 thru 2 V
16
8
Si5475BDC
Vishay Siliconix
12
6
8
4
0
0.0
0.12
1.5 V
1V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.10
0.08
0.06
0.04
V_GS = 1.8 V
V_GS = 2.5 V
0.02
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
7
I_D = 7.7 A
6
5
V_DS = 6 V
4
V_DS = 8.4 V
3
2
1
0
0
5
10
15
20
25
30
Q_g - Total Gate Charge (nC)
Gate Charge
4
T_C = 125 °C
2
25 °C
- 55 °C
0
0.0
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2100
1800
C_iss
1500
1200
900
600
C_rss
300
C_oss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
1.5 ^{ID = 7.7 A}
1.4
1.3
V_GS = 4.5, 2.5, 1.8 V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73381
S-83054-Rev. D, 29-Dec-08
www.vishay.com
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