SI5463EDC Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si5463EDC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
0.3
40
I_D = 250 mA
0.2
30
0.1
20
0.0
--0.1
10
Single Pulse Power
--0.2
--50 --25 0
25 50 75 100 125 150
T_J -- Temperature (_C)
Gate-Source Voltage vs. Gate Current
1000
800
T_A = 25_C
600
400
200
0
0
2
4
6
8
10
12
V_GS -- Gate-to-Source Voltage (V)
0
10^--3
10^--2
10^--1
1
10
Time (sec)
100 600
10,000
1,000
Gate-Source Voltage vs. Gate Current
100
10
1
150_C
0.1
0.01
0.001
0.0001
0.10
25_C
1
10 20
V_GS -- Gate-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^--4
Single Pulse
10^--3
10^--2
10^--1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
1.
2.
t₂
Duty Cycle, D
Per Unit Base
=
=
t₁
R_th^t_J2A
=
80_C/W
3. T_JM -- T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
2-4
Document Number: 71364
S-21251—Rev. C, 05-Aug-02