SI5463EDC Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET
Si5463EDC
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
--20
r_DS(on) (Ω)
0.062 @ V_GS = --4.5 V
0.068@ V_GS = --3.6 V
0.085 @ V_GS = --2.5 V
0.120 @ V_GS = --1.8 V
1206-8 ChipFETt
1
D
D
D
D
D
D
G
S
Bottom View
Ordering Information: Si5463EDC-T1
I_D (A)
--5.1
--4.9
--4.4
--3.7
S
Marking Code
LB XX
Lot Traceability
and Date Code
Part #
Code
G
5.4 kΩ
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{c, d}
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
--20
12
--5.1
--3.8
--3.7
--2.7
--15
--1.9
--1.0
2.3
1.25
1.2
0.65
--55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
45
Steady State
R_thJA
84
Steady State
R_thJF
20
55
100
_C/W
25
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. When using HBM. The MM rating is 300 V
c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-
tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-
connection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71364
S-21251—Rev. C, 05-Aug-02
www.vishay.com
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