SI5457DC Datasheet, PDF (4/11 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

Si5457DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.12
0.10
T_J = 150 °C
10
0.08
I_D = 4.9 A
0.06
1
T_J = 25 °C
0.04
T_J = 125 °C
0.02
T_J = 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temperature
1.2
1.1
1.0
I_D = 250 μA
0.9
0.8
0.7
0.6
0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
10^-3
10^-2
10^-1
1
10
Time (s)
Single Pulse Power
100 600
1
0.1
T_A = 25 °C
Single Pulse
1 ms
BVDSS Limited
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 67013
S10-2011-Rev. A, 06-Sep-10