SI5457DC Datasheet, PDF (3/11 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
5
V_GS = 5 V thru 3 V
V_GS = 2.5 V
16
4
Si5457DC
Vishay Siliconix
12
3
8
V_GS = 2 V
4
0
0
0.08
0.06
V_GS = 1.5 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
V_GS = 2.5 V
0.04
0.02
V_GS = 3.6 V
V_GS = 4.5 V
0
0
4
8
12
16
20
I_D - Drain Current (A)
On Resistance vs. Drain Current
10
I_D = 6.5 A
8
V_DS = 10 V
6
V_DS = 5 V
V_DS = 16 V
4
2
1
0
0
1800
T_C = 25 °C
T_C = 125 °C
0.5
1.0
T_C = - 55 °C
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1500
1200
C_iss
900
600
C_oss
300 ^Crss
0
0
1.6
1.4
3
6
9
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
V_GS = 4.5 V; 3.6 V; I _D = 4.9 A
1.2
V_GS = 2.5 V; I_D = 2 A
1.0
2
0.8
0
0
5
10
15
20
25
30
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67013
S10-2011-Rev. A, 06-Sep-10
www.vishay.com
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