SI5432DC Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

Si5432DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.050
0.040
I_D = 8.3 A
T_J = 150 °C
T_J = 25 °C
10
0.030
0.020
0.010
T_J = 125 °C
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
1.2
I_D = 250 µA
1.0
0.8
0.6
0.000
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
Time (s)
Single Pulse Power
100
Limited by R_DS(on)*
10
100 µs
1 ms
1
10 ms
100 ms
0.1
T_A = 25 °C
Single Pulse
1s
10 s
DC
BVDSS
Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
100 600
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4
Document Number: 68925
S-82293-Rev. A, 22-Sep-08