SI5432DC Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
N-Channel 20-V (D-S) MOSFET
Si5432DC
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.020 at V_GS = 4.5 V
20
0.025 at V_GS = 2.5 V
I_D (A)^a
6
6
Q_g (Typ.)
10 nC
1206-8 ChipFET^TM
1
D
D
D
D
D
D
G
S
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load Switches for Portable Devices
D
G
RoHS
COMPLIANT
Bottom View
Ordering Information: Si5432DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{e, f}
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
20
± 12
6^a
6^a
6^{a, b, c}
6^{a, b, c}
30
5.2
2.1^{b, c}
6.3
4
2.5^{b, c}
1.6^{b, c}
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^{a, c, d}
t≤5s
R_thJA
40
Maximum Junction-to-Foot (Drain)
Steady State
R_thJF
15
50
°C/W
20
Notes:
a. Package limited, T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 95 °C/W.
e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 68925
S-82293-Rev. A, 22-Sep-08
www.vishay.com
1