SI5415EDU Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
0.050
Si5415EDU
Vishay Siliconix
I_D = 14 A
6
V_DS = 10 V
V_DS = 5 V
4
V_DS = 16 V
2
0
0
20
40
60
80
Q_g - Total Gate Charge (nC)
Gate Charge
1.4
V_GS = 4.5 V, 3.7 V, 2.5 V; I_D = 10 A
1.3
1.2
1.1
V_GS = 1.8 V; I_D = 5 A
1.0
0.9
0.8
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.040
I_D = 10 A
0.030
0.020
T_J = 125 °C
0.010
T_J = 25 °C
0.000
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.0
0.9
0.8
0.7
0.6
I_D = 250 μA
0.5
0.4
0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
50
T_J = 150 °C
40
10
30
T_J = 25 °C
20
1
10
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Soure-Drain Diode Forward Voltage
Single Pulse Power, Junction-to-Ambient
S13-0789-Rev. A, 15-Apr-13
4
Document Number: 62837
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