SI5415EDU Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20.00
20
Si5415EDU
Vishay Siliconix
16.00
16
12.00
8.00
T_J = 25 °C
4.00
0.00
0
4
8
12
16
V_GS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
12
8
4
0
0.0
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
T_J = 150 °C
T_J = 25 °C
1.E-08
1.E-09
0
4
8
12
16
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
0.050
0.040
V_GS = 1.8 V
0.030
0.020
V_GS = 2.5 V
0.010
0.000
0
V_GS = 3.7 V
V_GS = 4.5 V
20
40
60
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
80
V_GS = 5 V thru 3 V
V_GS = 2.5 V
60
40
V_GS = 2 V
7000
6000
5000
C_iss
4000
3000
20
0
0.0
V_GS = 1.5 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
2000
1000
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
Capacitance
S13-0789-Rev. A, 15-Apr-13
3
Document Number: 62837
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