SI5414DC Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
Si5414DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.04
0.03
10
0.02
T_J = 150 °C
1
T_J = 25 °C
0.01
I_D = 9.9 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
1.3
1.2
I_D = 250 µA
1.1
1.0
0.9
0.8
0.7
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
10 ^-3
10 ^-2
10 ^-1
1
10
Time (s)
Single Pulse Power
100 600
10
1 ms
1
10 ms
0.1
T_A = 25 °C
Single Pulse
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65298
S09-1920-Rev. A, 28-Sep-09