SI5414DC Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
10
V_GS = 5 V thru 2.5 V
24
8
Si5414DC
Vishay Siliconix
18
6
12
V_GS = 2 V
6
0
0.0
0.030
V_GS = 1.5 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
4
2
0
0.0
2000
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.024
0.018
0.012
V_GS = 2.5 V
V_GS = 4.5 V
0.006
0.000
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 9.9 A
8
V_DS = 5 V
6
V_DS = 16 V
V_DS = 10 V
4
1600
C_iss
1200
800
C_oss
400
C_rss
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V; I_D = 12 A
1.4
1.2
1.0
2
0.8
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65298
S09-1920-Rev. A, 28-Sep-09
www.vishay.com
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