SI5404DC-T1-E3 Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 2.5-V (G-S) MOSFET

Si5404DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
0.2
40
I_D = 250 mA
- 0.0
30
Single Pulse Power
- 0.2
20
- 0.4
10
- 0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 80_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 _0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
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4
10 ^{- 2}
10 ^{- 1}
Square Wave Pulse Duration (sec)
1
10
Document Number: 71057
S-31989—Rev. C, 13-Oct-03