SI5404DC-T1-E3 Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 2.5-V (G-S) MOSFET

Si5404DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.06
1800
Capacitance
0.05
0.04
V_GS = 2.5 V
1500
C_iss
1200
0.03
0.02
V_GS = 4.5 V
0.01
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
Gate Charge
6
V_DS = 10 V
5
I_D = 5.2 A
4
3
2
1
900
600
300
C_rss
0
0
4
C_oss
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 5.2 A
1.4
1.2
1.0
0.8
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
I_D = 5.2 A
0.04
0.03
T_J = 25_C
0.02
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Document Number: 71057
S-31989—Rev. C, 13-Oct-03
www.vishay.com
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