SI5403DC Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si5403DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
10
T_J = 150 °C
T_J = 25 °C
1
0.04
0.03
0.02
0.01
I_D = 7.2 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temp.
2.4
0.00
0
4
8
12
16
20
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
2.2
40
2.0
30
1.8
I_D = 250 µA
20
1.6
1.4
10
1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
100
Time (s)
Single Pulse Power
100
Limited by R_DS(on)*
10
100 µs
1 ms
1
10 ms
0.1
T_A = 25 °C
Single Pulse
0.01
0.1
1
BVDSS
Limited
10
100 ms
1s
10 s
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 68643
S-81443-Rev. A, 23-Jun-08