SI5403DC Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
V_GS = 10 thru 4 V
16
4
Si5403DC
Vishay Siliconix
T_C = - 55 °C
12
3
8
4
0
0
0.05
V_GS = 3 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2
T_C = 25 °C
1
T_C = 125 °C
0
0.0
0.7
1.4
2.1
2.8
3.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2400
0.04
0.03
0.02
V_GS = 4.5 V
V_GS = 10 V
0.01
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
On Resistance vs. Drain Current
10
I_D = 7.2 A
8
V_DS = 15 V
1800
C_iss
1200
600
C_rss
C_oss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
1.4
V_GS = 10 V, I_D = 6.0 A
6
1.2
V_DS = 24 V
V_GS = 4.5 V, I_D = 7.2 A
4
1.0
2
0.8
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68643
S-81443-Rev. A, 23-Jun-08
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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